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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO PARAMETER Collector-base voltage VCEO VEBO IC ICM PC Tj Tstg HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE 2SB566 2SB566A Open emitter OND IC CONDITIONS TOR UC VALUE -70 -50 -60 -5 -4 -8 UNIT V Open base V Open collector V A A W ae ae Collectorl power dissipation Junction temperature Storage temperature TC=25ae 40 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-base breakdown voltage 2SB566 IC=-50mA; RBE= 2SB566A IE=-10|I A; IC=0 IC=-10|I CONDITIONS A ; IE=0 2SB566 2SB566A SYMBOL V(BR)CBO MIN -70 -50 TYP. MAX UNIT V V(BR)CEO Collector-emitter breakdown voltage V -60 -5 -1.0 -1.2 -1 35 60 200 |I V V V A V(BR)EBO VCEsat VBEsat ICBO hFE-1 hFE-2 fT Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain IC=-2 A;IB=-0.2 A IC=-2 A;IB=-0.2 A VCB=-50V; IE=0 IC=-0.1A ; VCE=-4V IC=-1A ; VCE=-4V IC=-0.5A ; VCE=-4V Switching times ton toff tstg Transition frequency Turn-on time Turn-off time Storage time ANG INCH C 100-200 EMIC ES IC=-0.5A ; VCC=-10.5V IB1=-IB2=-0.05 A DUC ON 15 0.3 3.0 2.5 TOR MHz |I |I |I s s s hFE-2 classifications B 60-120 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB566 2SB566A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A SEM GE HAN INC OND IC TOR UC 4 |
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